Detailed power amplifier model

This is a very detailed model of a Gallium Arsenide power amplifier.  The power dissipation is applied to a volume 60 Angstroms by 250 Angstroms by the gate width.  Thermal properties of the GaAs are temperature dependent and the metallization properties are anisotropic, a function of direction.

Click to enlarge
GaAs chip showing mesh and colored by properties
Close-up of the gate area
Chip temperatures
Temperatures with mesh turned off
Close-up of temperatures
Even closer view of gate temperatures
Back to Examples
© 2011 Harley Thermal LLC